# Recent questions and answers in MOSFET

A MOSFET has how many terminals?

What is channel length modulation in MOSFET?

What is the Laplace transform of step signal of 5 units magnitude?  A) 5s B) 5/s C) s/5 D) 1/s

A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of 600 C/W. If the ambient temperature is 300o C, then the maximum allowable power dissipation in the device will be A) 1.52 W B) 1.72 W C) 1.92W D) 2.00 W

When does the Body bias effect occur in an n-channel MOSFET?  A) When the Source voltage is less the Bulk voltage B) When the Source voltage is equal to or greater the Bulk voltage C) When the Drain voltage is equal to the Bulk voltage D) When the Gate voltage is equal to the Bulk Voltage

If the gate voltage Vgs of a MOSFET is increased, then (a) mobile charges carrier density decreases. (b) channel conductivity increases (c) channel widens (d) channel conductivity decreases

Assume that the n-channel MOSFET shown in figure is ideal and that its threshold voltage is +1 .0 V. The voltage Vab between nodes a and b is A)5V B)2V C)1V D)0V

The conduction loss versus device current characteristic of a power MOSFET is best approximated by (A) a parabola (B) a straight line (C) a rectangular hyperbola (D) an exponentially decaying function

A depletion MOSFET differs from a JFET in the sense that it has no   (A) channel (B) gate (C) P-N junctions (D) substrate

Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

The body effect in the MOS technology refers to  (A) size of the drain on the drain current  (B) doping of the drain on the drain current  (C) effect of the reverse bias voltage between source and body on the drain current  (D) effect of the reverse bias voltage between drain and body on the drain current

The MOSFET to act as an amplifier is biased in  (A) cut-off region (B) saturation region (C) triode region (D) any of the above regions

In a n-channel MOSFET, an inversion layer is  (A) accumulation of electrons near the surface of the substrate under the gate  (B) accumulation of electrons near the drain  (C) accumulation of electrons near the surface  (D) accumulation of hole in the substrate

To increase size of a MOSFET transistor (A) Increase width only (B) Increase length only (C) Increase both width and length (D) None of the above

Fill in the blank(s) with the appropriate word(s)  i. A MOSFET operates in the ________________ mode when vGS < vGS(th)  ii. In the ohmic region of operation of a MOSFET vGS - vGS (th) is greater than ________________.  iii. rDS (ON) of a MOSFET ________________ with increasing vGS.  iv. In the active ... th) is almost ________________ in the active mode of operation.  ix. The safe operating area of a MOSFET is restricted on the left hand side by the ________________ limit.

What are the main constructional differences between a MOSFET and a BJT? What effect do they have on the current conduction mechanism of a MOSFET?

Fill in the blank(s) with the appropriate word(s)  i. A MOSFET is a ________________ controlled ________________ carrier device.  ii. Enhancement type MOSFETs are normally ________________devices while depletion type MOSFETs are normally ________________ devices.  iii. The Gate terminal of a MOSFET is ... the ________________ voltage.  vi. The thickness of the ________________ layer remains constant as gate source voltage is increased byond the ________________ voltage.

What is the transconductance of a MOSFET?

What is meant by pinch off voltage in MOSFET?

What is meant by body effect in MOSFET?

How can we check a Mosfet?

What is the use of a Mosfet?

Why Mosfet is called Mosfet?

What is the work of MOSFET?

The transit time of the current carriers through the channel of a JFET decides it's?