Recent questions and answers in Semiconductor

2 answers 9 views

At room temperature in an intrinsic piece of Si there could be (A) No free carriers (B) Some electrons but no holes (C) Some holes but no electrons (D) Equal number of holes and electrons

answered Aug 1, 2018 in Semiconductor
2 answers 10 views

Gold is often diffused into silicon PN junction devices to   (A) increase the recombination rate (B) reduce the recombination rate (C) make silicon a direct gap semiconductor (D) make silicon semi-metal

answered Aug 1, 2018 in Semiconductor
1 answer 6 views

Pure silicon is (a) a p-type semiconductor (b) an n-type semiconductor (c) an intrinsic semiconductor (d) an extrinsic semiconductor 

answered Aug 1, 2018 in Semiconductor
1 answer 32 views

Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to (a) Phosphorous (b) Boron (c) Antimony (d) Aluminium 

answered Aug 1, 2018 in Semiconductor
1 answer 69 views

In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: A) Half the total number of electrons in the crystal B) Zero C) Half the number of atoms in the crystal D) Half the number of free electrons in the crystal

answered Jun 18, 2018 in Semiconductor
1 answer 48 views

 In case of semi-conductors, the ratio of conduction current to displacement current is: A) more than 200 and less than 1000 B) less than 100 but greater than 1/100 C) less than 1/100 D) more than 1000

answered Jun 17, 2018 in Semiconductor
0 answers 11 views

Semiconductor devices are protected by a fuse and the material used is (A) silver (B) gold (C) copper (D) tin 

asked Jun 4, 2018 in Semiconductor
1 answer 14 views

In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: (1) Remains unaltered (2) Moves towards the conduction band (3) Move towards the center of forbidden energy gap (4) May or may not move depending on temperature 

answered May 29, 2018 in Semiconductor
1 answer 13 views

The following property of semiconductors cannot be determined from Hall effect: (1) Semiconductor is n–type or p–type (2) The carrier concentration (3) The mobility of semiconductor (4) The atomic concentration of semiconductor

answered May 29, 2018 in Semiconductor
0 answers 11 views

In an intrinsic semiconductor the Fermi level is (a) closer to valence band. (b) closer to conduction band. (c) within the balance band. (d) midway between the valence and conduction bands. 

asked May 25, 2018 in Semiconductor
0 answers 18 views

At absolute zero temperature, an intrinsic semiconductor behaves as (a) a good conductor (b) a super conductor (c) an insulator (d) variable resistor

asked May 25, 2018 in Semiconductor
1 answer 8 views

The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

answered May 17, 2018 in Semiconductor
1 answer 12 views

Which of the following serves as donor impurity in Silicon?  (A) Boron (B) Indium (C) Germanium (D) Antimony 

answered May 16, 2018 in Semiconductor
1 answer 14 views

The Maximum spectral response of the germanium and silicon is in the   (A) infrared region (B) ultraviolet region (C) visible region (D) x-ray region

answered May 16, 2018 in Semiconductor
1 answer 8 views

Silicon has a preference in IC technology because  (a) it is an indirect semiconductor (b) it is a covalent semiconductor (c) it is an elemental semiconductor (d) of the availability of nature oxide SiO

answered May 16, 2018 in Semiconductor
1 answer 4 views

The semiconductor used for LEDs emitting in the visible range is  (a) GaAs (b) GaAlAs (c) GalnAs (d) GaAsP

answered May 15, 2018 in Semiconductor
1 answer 13 views

The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to  (a) 1 ionic bond and 3 covalent bonds (b) 1 ionic bond and 4 covalent bonds (c) 2 ionic bonds and 2 covalent bonds (d) 2 ionic bonds and 4 covalent bonds

answered May 15, 2018 in Semiconductor
1 answer 15 views

The material used for ‘doping’ to prepare N - type semiconductor is

answered May 14, 2018 in Semiconductor
1 answer 11 views

Most of the transistors are NPN type and not PNP type because  1.NPN transistor gives large voltage gain 2.NPN transistors are more negative than PNP transistors 3.In NPN transistor, the current conduction is by free electrons which are less mobiles than holes 4.We can have high conduction is NPN transistors 

answered May 13, 2018 in Semiconductor
1 answer 10 views

When reverse bias is applied to a junction diode, it  1.increases the potential barrier 2.decreases the potential barrier 3.greatly increases the minority carrier current 4.greatly increases the majority carrier current 

answered May 13, 2018 in Semiconductor
1 answer 12 views

When a P - N junction is forward biased  1.only electrons in N-region are injected into P-region 2.only holes in P-region are injected into N-region 3.majority carriers in each region are injected into the other region 4.minority current is reduced to zero 

answered May 13, 2018 in Semiconductor
1 answer 8 views

While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) Doped semiconductor has more carriers as compared to un-doped semiconductor (C) Doped semiconductor has less resistance as compared to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

answered May 12, 2018 in Semiconductor
1 answer 12 views

To increase mobility of electron in a given piece of semiconductor (A) Increase overall size of the semiconductor (B) Increase length (C) Increase width (D) Small increase in temperature above room temperature value

answered May 12, 2018 in Semiconductor
1 answer 18 views

In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this information, which of the following statement is true ? (A) Depletion region is more extended in P-side than N-side (B) Depletion region is more extended in N-side than P-side (C) Depletion region would be equal on both sides (D) Not enough information provided to give answer

answered May 12, 2018 in Semiconductor
1 answer 52 views

Space charge region or depletion region in a P-N diode has (A) No charge (B) No fixed charge (C) No mobile charge (D) Both fixed and mobile charges

answered May 12, 2018 in Semiconductor
1 answer 10 views
1 answer 15 views
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