Dry etching refers to removal of material, typically a masked pattern of semiconductor material, by exposing material to a bombardment of ions which contain (a) Plasma of nitrogen, chlorine and boron trichloride (b) Plasma of sodium, chlorine and boron trichloride (c) Plasma of nitrogen, phosphorous and boron trichloride (d) Plasma of nitrogen, chlorine and boron trioxide
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Plasma of nitrogen, chlorine and boron trichloride. Other gases include argon and helium.

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