Consider the following statements with regard to power diodes : 1. The breakdown voltage is directly proportional to the doping density of the drift region. 2. Losses in the diode are less due to conductivity modulation of the drift region in the on -state. 3. The vertically oriented structure supports large blocking voltages. Which of the above statements is/are correct ?
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Consider the following statements with regard to power diodes : 1. The breakdown voltage is directly proportional to the doping density of the drift region. 2. Losses in the diode are less due to conductivity modulation of the drift region in the on -state. 3. The vertically oriented structure supports large blocking voltages. Which of the above statements is/are correct ?


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