At very high temperatures, extrinsic semiconductor becomes intrinsic semiconductor because

(A) Of drive in diffusion of dopants & carriers.

(B) Band to band transition dominates impurity ionization.

(C) Impurity ionization dominates band to band transition.

(D) Band to band transition is balanced by impurity ionisation.
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At very high temperatures, extrinsic semiconductor becomes intrinsic semiconductor because Impurity ionization dominates band to band transition.

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