Can you help by answering this question?

Using the AutoSum button will replace the selected cell with

12 views
in Semiconductor by
To increase mobility of electron in a given piece of semiconductor

(A) Increase overall size of the semiconductor

(B) Increase length

(C) Increase width

(D) Small increase in temperature above room temperature value

1 Answer

0 votes
by

To increase mobility of electron in a given piece of semiconductor Small increase in temperature above room temperature value

Related questions

2 answers 9 views

At room temperature in an intrinsic piece of Si there could be (A) No free carriers (B) Some electrons but no holes (C) Some holes but no electrons (D) Equal number of holes and electrons

asked May 12, 2018 in Semiconductor by Shimroz123
1 answer 32 views

Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to (a) Phosphorous (b) Boron (c) Antimony (d) Aluminium 

asked May 25, 2018 in Semiconductor by Shimroz123
1 answer 17 views

The electrical conductivity of a semiconductor increases with increase in temperature because (a) the carrier concentration increases (b) the mobility of carrier increases (c) both carrier concentration and mobility increase (d) the band gap decreases

asked Apr 23, 2018 in Electrical Engineering by Shimroz123
1 answer 68 views

In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: A) Half the total number of electrons in the crystal B) Zero C) Half the number of atoms in the crystal D) Half the number of free electrons in the crystal

asked Jun 18, 2018 in Semiconductor by Shimroz123
1 answer 13 views

The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to  (a) 1 ionic bond and 3 covalent bonds (b) 1 ionic bond and 4 covalent bonds (c) 2 ionic bonds and 2 covalent bonds (d) 2 ionic bonds and 4 covalent bonds

asked May 15, 2018 in Semiconductor by Shimroz123
1 answer 26 views

For given applied voltage, with the increase in frequency of the applied voltage?

asked Mar 19, 2018 in Transformer by Shimroz123
1 answer 8 views

The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

asked May 17, 2018 in Semiconductor by Shimroz123
1 answer 15 views

The material used for ‘doping’ to prepare N - type semiconductor is

asked May 14, 2018 in Semiconductor by Shimroz123
0 answers 18 views

A critical region  (1) is a piece of code which only one process executes at a time (2) is a region prone to deadlock (3) is a piece of code which only a finite number of processes execute (4) is found only in Windows NT operation system

asked Apr 10, 2018 in Computer Engineering by Shimroz123
1 answer 13 views

In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: (1) Remains unaltered (2) Moves towards the conduction band (3) Move towards the center of forbidden energy gap (4) May or may not move depending on temperature 

asked May 29, 2018 in Semiconductor by Shimroz123
0 answers 11 views

In an intrinsic semiconductor the Fermi level is (a) closer to valence band. (b) closer to conduction band. (c) within the balance band. (d) midway between the valence and conduction bands. 

asked May 25, 2018 in Semiconductor by Shimroz123
1 answer 4 views

The semiconductor used for LEDs emitting in the visible range is  (a) GaAs (b) GaAlAs (c) GalnAs (d) GaAsP

asked May 15, 2018 in Semiconductor by Shimroz123
0 answers 38 views

In a Traveling-wave Tube, the velocity of electron beam with respect to the axial velocity of RF field is kept...  A) Lower B) Higher C) Equal D) Any of these

asked Apr 9, 2018 in Electrical Engineering by Shimroz123
0 answers 14 views

Velocity of an electron (in km/S) starting at rest and travelling to a point 100 V above the starting potential is around  A) 3600 B) 4000 C) 5100 D) 6000

asked Apr 9, 2018 in Electronics Engineering by Shimroz123
0 answers 11 views

Semiconductor devices are protected by a fuse and the material used is (A) silver (B) gold (C) copper (D) tin 

asked Jun 4, 2018 in Semiconductor by Shimroz123
1 answer 5 views

In order to increase the range of a voltmeter

asked May 15, 2018 in Electrical Measurements and Instrumentation by Shimroz123
2 answers 34 views

The fall in speed of a dc generator due to increase in load can be corrected by  (1) cooling the armature.. (2) increasing the excitation. (3) reducing the load voltage. (4) increasing the input to the prime mover

asked May 1, 2018 in Electrical Machine by Shimroz123
1 answer 8 views

While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) Doped semiconductor has more carriers as compared to un-doped semiconductor (C) Doped semiconductor has less resistance as compared to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

asked May 12, 2018 in Semiconductor by Shimroz123
1 answer 21 views

 The charge on an electron is known to be 1.6 x 10-19 coulomb. In a circuit the current flowing is 1 A. How many electrons will be flowing through the circuit in a second? 

asked Mar 31, 2018 in Electrical Engineering by Shimroz123
1 answer 10 views

In a control system the output of the controller is given to?

asked Mar 27, 2018 in Control System by Shimroz123
1 answer 40 views

The resolved part of the resultant of two forces inclined at an angle 9 in a given direction is equal to

asked Mar 22, 2018 in Engineering Mechanics by Shimroz123
1 answer 18 views

In order to generate electron-hole pairs, the maximum wavelength of radiation for Silicon (Band gap = 1.1 eV) is  (a) 1.88 μm (b) 1.68 μm (c) 1.13 μm (d) 1.54 μm

asked May 15, 2018 in Physics by Shimroz123
1 answer 8 views

As the thermal noise get doubled due to the increase in a resistance the noise power get.  (A) doubled (B) quadruped (C) unchanged (D) halved.

asked May 17, 2018 in Electronics communication by Shimroz123
0 answers 29 views

When two alternators A and B are operating in parallel, the increase in steam supply to alternator A will cause the active power output of (1) Alternator A to be decreased and alternator B to be increased (2) Alternators A and B is not affected (3) Alternators A and B is increased (4) Alternator A to be increased and alternator B to be decreased

asked Apr 11, 2018 in Electrical Engineering by Shimroz123
0 answers 18 views

At absolute zero temperature, an intrinsic semiconductor behaves as (a) a good conductor (b) a super conductor (c) an insulator (d) variable resistor

asked May 25, 2018 in Semiconductor by Shimroz123
1 answer 15 views
1 answer 29 views

The vertical deflection of an electron beam on the screen of a CRO is measured to be 8 mm. Now, the potential difference between the Y-plates is doubled, and simultaneously the pre-accelerating anode voltage is reduced to half of its previous value. Then, the vertical deflection of the beam on the screen would become (A) 64 mm (B) 32 mm (C) 8 mm (D) 1 mm

asked Apr 28, 2018 in Digital Instrumentation by Shimroz123
0 answers 54 views

The effect of increasing the length of air gap in an induction motor is to increase the (a) power factor (b) speed (c) magnetising current (d) air gap flux  

asked May 25, 2018 in Induction Machine by Shimroz123
1 answer 14 views

A rectangular magnet of magnetic moment M is cut into two piece of same length, the magnetic moment of each piece will be

asked Mar 29, 2018 in Electrical engineering materials by Shimroz123

Welcome to electronics2electrical.com here you can ask questions related to electrical, electronics, mechanical, telecommunication, instrumentation, computer, mathematics, physics etc.
Be respectful to all the members. Do not copy and paste the answers from other websites which have copyright content. While asking question give full details about it.

Categories

Most popular tags

power motor dc circuit transformer voltage current used system phase resistance factor synchronous load ac energy induction electric generator series frequency between speed capacitor use electrical meter line difference control type mosfet transmission magnetic plant high single instrument bjt unit source advantages function diode and machine winding field define torque parallel amplifier supply shunt thyristor motors electricity arduino maximum time relay armature problem value on transformers types coil diagram state flow ratio material three formula starting direction theorem method emf operating efficiency digital wave microprocessor test instruments inductance loss measure operation connected signal low applications effect single-phase network temperature working constant losses different law wattmeter measuring compare controlled breaker drive device logic rc full switch flux wire resistivity disadvantages free of materials machines angle force converter conductor transistor gain open protection scr core measurement number bridge principle generators reactance circuits negative the friction iron loop short pole battery conservation steam resistors hysteresis computer using analog lines secondary station gate a rectifier inverter linear induced relays nuclear capacitance basic characteristics design direct work rotor electronics ammeter forces diesel damping rlc connection factors capacitors minimum insulation moving regulation running self systems air fault range main stability quality starter igbt eddy alternator ideal rl average 3-phase plants arc thermal error fuzzy biasing dielectric pressure balanced superposition errors copper rotation feedback impedance measured electronic electrons charge inductive transfer explain start off back curve over solar is three-phase tariff locomotive peak bias zener engineering commutator surge conductors rating universal potentiometer density permanent mechanical transducer capacity memory adc excitation two fuse pure harmonics application semiconductor inductor internal pmmc reaction welding resonance traction permeability breakers rms designed electromagnetic si generation brushes switching capacitive shaded rate 1 distribution resistor methods delta star oscillator reluctance simplification algebra 8085 boolean weston dynamometer insulating strength installation definition fuel heating earth units
...