Can you help by answering this question?

What does file format GIF stands for

8 views
in Semiconductor by
While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ?

(A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor

(B) Doped semiconductor has more carriers as compared to un-doped semiconductor

(C) Doped semiconductor has less resistance as compared to un-doped semiconductor

(D) Doped as well as un-doped semiconductor have equal bandwidth

1 Answer

0 votes
by

While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ?

(A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor

(B) Doped semiconductor has more carriers as compared to un-doped semiconductor

(C) Doped semiconductor has less resistance as compared to un-doped semiconductor

(D) Doped as well as un-doped semiconductor have equal bandwidth

Related questions

1 answer 82 views

When the temperature of a doped semiconductor is increased, its conductivity  (1) Decreases (2) Increases (3) Does not change (4) Increases or decreases depending on whether it is p-type or n-type

asked Apr 9, 2018 in Electronics Engineering by Shimroz123
0 answers 19 views

While selecting motor for an A.C which of the following characteristics is of great importance (1) Type of bearings (2) Type of enclosure (3) Noise (4) Arrangement for power transmission  

asked Apr 11, 2018 in Electrical Engineering by Shimroz123
1 answer 12 views

Which of the following serves as donor impurity in Silicon?  (A) Boron (B) Indium (C) Germanium (D) Antimony 

asked Apr 5, 2018 in Semiconductor by Shimroz123
1 answer 17 views

In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this information, which of the following statement is true ? (A) Depletion region is more extended in P-side than N-side (B) Depletion region is more extended in N-side than P-side (C) Depletion region would be equal on both sides (D) Not enough information provided to give answer

asked May 12, 2018 in Semiconductor by Shimroz123
1 answer 18 views

Which of the following is true regarding the band-gap energy of a semiconductor ? (A) Minimum energy required to break a covalent bond (B) On breaking of the bond, electron is generated (C) On breaking of the bond, electron-hole pair is generated (D) A & C both are true

asked May 12, 2018 in Physics by Shimroz123
1 answer 29 views

Which of the following semiconductor materials is (are) used for manufacturing solar cells?  (1) Gallium arsenide (2) Indium arsenide (3) Cadmium sulfide (4) All of these

asked Apr 9, 2018 in Electronics Engineering by Shimroz123
1 answer 8 views

Why is an intrinsic semiconductor doped?

asked Sep 4, 2018 by Shimroz123
2 answers 36 views

Which part of the computer is used for calculating and comparing?  (a) Disk unit (b) Control unit (c) ALU (d) Modem

asked May 23, 2018 in Computer Engineering by Shimroz123
1 answer 68 views

In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: A) Half the total number of electrons in the crystal B) Zero C) Half the number of atoms in the crystal D) Half the number of free electrons in the crystal

asked Jun 18, 2018 in Semiconductor by Shimroz123
1 answer 8 views

The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

asked May 17, 2018 in Semiconductor by Shimroz123
1 answer 12 views

To increase mobility of electron in a given piece of semiconductor (A) Increase overall size of the semiconductor (B) Increase length (C) Increase width (D) Small increase in temperature above room temperature value

asked May 12, 2018 in Semiconductor by Shimroz123
0 answers 11 views

Semiconductor devices are protected by a fuse and the material used is (A) silver (B) gold (C) copper (D) tin 

asked Jun 4, 2018 in Semiconductor by Shimroz123
1 answer 13 views

In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: (1) Remains unaltered (2) Moves towards the conduction band (3) Move towards the center of forbidden energy gap (4) May or may not move depending on temperature 

asked May 29, 2018 in Semiconductor by Shimroz123
0 answers 11 views

In an intrinsic semiconductor the Fermi level is (a) closer to valence band. (b) closer to conduction band. (c) within the balance band. (d) midway between the valence and conduction bands. 

asked May 25, 2018 in Semiconductor by Shimroz123
1 answer 4 views

The semiconductor used for LEDs emitting in the visible range is  (a) GaAs (b) GaAlAs (c) GalnAs (d) GaAsP

asked May 15, 2018 in Semiconductor by Shimroz123
1 answer 13 views

The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to  (a) 1 ionic bond and 3 covalent bonds (b) 1 ionic bond and 4 covalent bonds (c) 2 ionic bonds and 2 covalent bonds (d) 2 ionic bonds and 4 covalent bonds

asked May 15, 2018 in Semiconductor by Shimroz123
1 answer 15 views

The material used for ‘doping’ to prepare N - type semiconductor is

asked May 14, 2018 in Semiconductor by Shimroz123
1 answer 13 views

The following property of semiconductors cannot be determined from Hall effect: (1) Semiconductor is n–type or p–type (2) The carrier concentration (3) The mobility of semiconductor (4) The atomic concentration of semiconductor

asked May 29, 2018 in Semiconductor by Shimroz123
0 answers 18 views

At absolute zero temperature, an intrinsic semiconductor behaves as (a) a good conductor (b) a super conductor (c) an insulator (d) variable resistor

asked May 25, 2018 in Semiconductor by Shimroz123
1 answer 32 views

Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to (a) Phosphorous (b) Boron (c) Antimony (d) Aluminium 

asked May 25, 2018 in Semiconductor by Shimroz123
1 answer 15 views
1 answer 19 views

State the function of (i) Neutral section, (ii) Section insulator, (iii) Un-insulated overlap, (iv) Insulated overlap.

asked Sep 12, 2018 by Shimroz123
1 answer 14 views

The following should be considered while selection a transducer: -  a) Sensitivity b) Operating Range c) Frequency Response d) All the above

asked Apr 10, 2018 in Instrumentation and control by Shimroz123
1 answer 18 views

Comparing the total copper cross sections in terms of current-carrying capacity for a single-phase and a three-phase 120 V system with effective load resistance of 15Ω, will yield: A. single-phase 32 A; three-phase 16 A B. single-phase 16 A; three-phase 8 A C. single-phase 8 A; three-phase 4 A D. single-phase 16 A; three-phase 0 A

asked Apr 12, 2018 in Electrical Engineering by Shimroz123
0 answers 90 views

 When The dc converter in figure shown has a resistance load of R = 10 Ω and the input voltage is Vs 220 V the converter switch remains on, its voltage drop is Vo -2 V. The chopping frequency is fI K sW Vs If the duty cycle is 50%, determine: (a) the average output voltage V (b) the RMS output voltage Vo (c) the converter efficiency (d) the effective input resistance of the converter

asked Apr 26 by Hussein
1 answer 11 views

Which of these is not a semiconductor?  a) Si b) Tungsten c) Germanium d) None of these

asked Apr 10, 2018 in Instrumentation and control by Shimroz123
1 answer 28 views
0 answers 16 views

Comparing to constant frequency PWM, variable frequency control is not preferred for chopper drives. Because  A) Wide range of frequency variation is required for the control of duty cycle B) Large off time make create the load current discontinuous C) Introduce wide spectrum of harmonics and possibility of interference with communication lines D) All the above

asked Apr 9, 2018 in Electronics Engineering by Zeeshan
1 answer 17 views

List out the precautions to be taken while charging of lead- acid battery 

asked Sep 4, 2018 by Shimroz123
1 answer 87 views

A 0-10 A ammeter has a guaranteed accuracy of 1% of full scale deflection, the limiting error while reading 2.5 A will be (a) 1% (b) 2% (c) 4% (d) None of these 

asked May 26, 2018 in Electrical Measurements and Instrumentation by Shimroz123
0 answers 18 views

While measuring power in a three phase load by two wattmeter method, the reading of two wattmeter are equal and opposite, when (a) load is balanced (b) power factor is unity (c) phase angle is between 60° to 90° (d) the load is purely inductive 

asked May 26, 2018 in Electrical Measurements and Instrumentation by Shimroz123
1 answer 18 views

The speed of a 4-pole induction motor is controlled by varying the supply frequency while maintaining the ratio of supply voltage to supply frequency (V/f ) constant. At rated frequency of 50 Hz and rated voltage of 400 V its speed is 1440 rpm. Find the speed at 30 Hz, if the load torque is constant  (A) 882 rpm (B) 864 rpm (C) 840 rpm (D) 828 rpm

asked May 17, 2018 in Induction Machine by Shimroz123
1 answer 33 views

A 240 V, dc shunt motor draws 15 A while supplying the rated load at a speed of 80 rad/s. The armature resistance is 0.5 W and the field winding resistance is 80 W. The net Voltage across armature resistance at the time of plugging will be

asked May 8, 2018 in Electrical Machine by Shimroz123

Welcome to electronics2electrical.com here you can ask questions related to electrical, electronics, mechanical, telecommunication, instrumentation, computer, mathematics, physics etc.
Be respectful to all the members. Do not copy and paste the answers from other websites which have copyright content. While asking question give full details about it.

Categories

Most popular tags

power motor dc circuit transformer voltage current used system phase resistance factor synchronous load ac energy induction electric generator series frequency between speed capacitor use electrical meter line difference control type mosfet transmission magnetic plant high single instrument bjt unit source advantages function diode and machine winding field define torque parallel amplifier supply shunt thyristor motors electricity arduino maximum time relay armature problem value on transformers types coil diagram state flow ratio material three formula starting direction theorem method emf operating efficiency digital wave microprocessor test instruments inductance loss measure operation connected signal low applications effect single-phase network temperature working constant losses different law wattmeter measuring compare controlled breaker drive device logic rc full switch flux wire resistivity disadvantages free of materials machines angle force converter conductor transistor gain open protection scr core measurement number bridge principle generators reactance circuits negative the friction iron loop short pole battery conservation steam resistors hysteresis computer using analog lines secondary station gate a rectifier inverter linear induced relays nuclear capacitance basic characteristics design direct work rotor electronics ammeter forces diesel damping rlc connection factors capacitors minimum insulation moving regulation running self systems air fault range main stability quality starter igbt eddy alternator ideal rl average 3-phase plants arc thermal error fuzzy biasing dielectric pressure balanced superposition errors copper rotation feedback impedance measured electronic electrons charge inductive transfer explain start off back curve over solar is three-phase tariff locomotive peak bias zener engineering commutator surge conductors rating universal potentiometer density permanent mechanical transducer capacity memory adc excitation two fuse pure harmonics application semiconductor inductor internal pmmc reaction welding resonance traction permeability breakers rms designed electromagnetic si generation brushes switching capacitive shaded rate 1 distribution resistor methods delta star oscillator reluctance simplification algebra 8085 boolean weston dynamometer insulating strength installation definition fuel heating earth units

8,450 questions

7,047 answers

132 comments

3,084 users

...