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For IGBT, which of the following statement is true? 

(a) Switching speed of IGBT is more than bipolar transistor (b) IGBT is a current-controlled device (c) On-state collector-emitter voltage is less than that of bipolar junction transistor (d) It combines voltage control features of MOSFET gate and high power capability of bipolar transistor

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For IGBT, which of the following statement is true? 

(a) Switching speed of IGBT is more than bipolar transistor (b) IGBT is a current-controlled device (c) On-state collector-emitter voltage is less than that of bipolar junction transistor (d) It combines voltage control features of MOSFET gate and high power capability of bipolar transistor

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