A power diode has lightly doped n type substrate sandwiched between heavily doped p and n regions 

(a) to increase reverse breakdown voltage (b) to reduce ohmic loss under forward bias (c) to decrease switching time of the power diode (d) to improve transient behaviour of the diode
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A power diode has lightly doped n type substrate sandwiched between heavily doped p and n regions 

to improve transient behaviour of the diode

by

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