Barrier potential in a P-N junction is caused by 

 (A) thermally generated electrons and holes (B) diffusion of majority carriers across the junction (C) migration of minority carriers across the junction (D) flow of drift current.
in Diode by

1 Answer

0 like 0 dislike

Barrier potential in a P-N junction is caused by migration of minority carriers across the junction

by

Related questions

1 answer
2 answers
asked Dec 20, 2018 by Kanhiya | 176 views
1 answer
asked Apr 9, 2018 in Electronics Engineering by anonymous1 | 15 views
1 answer
1 answer
asked Apr 4, 2018 in Semiconductor Diodes by anonymous1 | 46 views
0 answers
asked Oct 3, 2018 in Basic concepts by Chandan Kumar | 131 views
1 answer
1 answer
1 answer
1 answer
1 answer

9,143 questions

7,898 answers

145 comments

3,250 users