85 views
asked in IGBT by
What is IGBT (Insulated Gate Bipolar Transistor) ?

Your answer

Thanks for your contribution. Feel free to answer this question. Please avoid short answer. Your answer is most welcome. Be genuine.

Upload image or document:

Your name to display (optional):
Privacy: Your email address will only be used for sending these notifications.

2 Answers

0 votes
answered by

IGBT (Insulated Gate Bipolar Transistor)

image


image

image

IGBT combines the advantages of BJT and MOSFET.
High switching speed of MOSFET
Low conduction losses of BJT
No second breakdown problem
Three terminal (Gate, emitter and collector)
High efficiency
Fast switching
Four layers PNPN
Controlled by MOS gate structure
Topologically same as thyristor with MOS gate
IGBT is a voltage controlled device.
The input impedance of IGBT is high.
The drive circuit of IGBT is simple.
Switching speed of IGBT is more than BJT but less than MOSFET.
IGBT shows negative temperature coefficient up to 70% after that it shows positive temperature coefficient.
Conduction losses are low.
Switching losses are low for high frequency.
IGBT is bipolar device.
IGBT is minority carrier device.
IGBT have input characteristics of MOSFET and output characteristics of BJT.
0 votes
answered by
As compare to BJT and MOSFET, IGBT have very low on state voltage drop. IGBT require low driving power. IGBT have wide SOA (Safe Operating Area). The current conduction capability of IGBT is better than BJT. But the switching speed of IGBT is less than MOSFET and more than BJT. Because the turning off time of IGBT is bit slow. IGBT is very useful for improving dynamic performance and efficiency. IGBT also very good in reducing audible noise.

Welcome to Q&A site for electrical and electronics engineering discussion for diploma, B.E./B.Tech, M.E./M.Tech, & PhD study.
If you have a new question please ask in English.
If you want to help this community answer these questions.

Categories

...