# The number of p-n junctions in a thyristor are

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The number of p-n junctions in a thyristor are

A)1 B) 2 C) 3 D) 4

The number of p-n junctions in a thyristor are  3

## Related questions

When cathode is positive with respect to anode in an SCR, the number of blocked p-n junctions is   (a) 1 (b) 2 (c) 3 (d) 4

Which of the following are available in the depletion layer of a P -N junction diode ? (A) Free mobile electrons only (B) Free mobile holes only (C) Both free mobile electrons and holes (D) Neither free mobile electrons nor holes

In a network, if the number of holes is n and number of elements is e, then the number of independent mesh equations required to solve the network is (a) e – n + 1 (b) e + n + 1 (c) e + n – 1 (d) e – n – 1

If the number of branches in a network is 'B', the number of nodes is 'N' and the number of dependent loops is 'L', then the number of independent node equations will be  (a) N+L–1 (b) B–1 (c) B–N (d) N–1

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In a thyristor, the magnitude of anode current will:

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what are the disadvantages of thyristor?

Explain the forward bias characteristics of a P-N Junction diode.

The region consisting of holes and electrons near the p-n junction of a diode is (A) diffusion region (B) neutral zone (C) recombination region (D) depletion region

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One of the necessary and sufficient condition for a network function N(s)=p(s)/q(s) to be a transfer function is that  A) The coefficients of the polynomial p(s) and q(s) must be real and those for q(s) must be positive B) Coefficients of p(s) and q(s) must be real and positive C) Coefficients of p(s) must be positive and real but coefficients of q(s) can be negative also D) Degree of p(s) and q(s) may differ by either zero or one only

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Barrier potential in a P-N junction is caused by   (A) thermally generated electrons and holes (B) diffusion of majority carriers across the junction (C) migration of minority carriers across the junction (D) flow of drift current.

In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this information, which of the following statement is true ? (A) Depletion region is more extended in P-side than N-side (B) Depletion region is more extended in N-side than P-side (C) Depletion region would be equal on both sides (D) Not enough information provided to give answer

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In a PN-junction with open circuit terminal (equilibrium), with P doping higher as compared to N doping (A) N-side depletion region is small as compared to p-side depletion region (B) N-side depletion region is large as compared to p-side depletion region (C) N-side depletion region is same as p-side depletion region (D) Cannot say

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A power diode has lightly doped n type substrate sandwiched between heavily doped p and n regions  (a) to increase reverse breakdown voltage (b) to reduce ohmic loss under forward bias (c) to decrease switching time of the power diode (d) to improve transient behaviour of the diode

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