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At absolute zero temperature, an intrinsic semiconductor behaves as (a) a good conductor (b) a super conductor (c) an insulator (d) variable resistor

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In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: A) Half the total number of electrons in the crystal B) Zero C) Half the number of atoms in the crystal D) Half the number of free electrons in the crystal

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In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: (1) Remains unaltered (2) Moves towards the conduction band (3) Move towards the center of forbidden energy gap (4) May or may not move depending on temperature 

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At very high temperatures, extrinsic semiconductor becomes intrinsic semiconductor because (A) Of drive in diffusion of dopants & carriers. (B) Band to band transition dominates impurity ionization. (C) Impurity ionization dominates band to band transition. (D) Band to band transition is balanced by impurity ionisation.

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The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to  (a) 1 ionic bond and 3 covalent bonds (b) 1 ionic bond and 4 covalent bonds (c) 2 ionic bonds and 2 covalent bonds (d) 2 ionic bonds and 4 covalent bonds

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Intrinsic semiconductor material is characterized by a valence shell of how many electrons? a) 1 b) 2 c) 4 d) 6

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An induction motor operating at 0.8 pf lagging is consuming 300 kW. A zero real power consuming synchronous motor is connected across the induction motor to raise the pf to 0.92 lagging. The reactive power drawn by the synchronous motor is a. - 352 kVAR b. - 225 kVAR c. - 127.8 kVAR d. - 97.2 kVAR

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A system function has a pole at s=0 and a zero at s= -1. The constant multiplier is unity. For an excitation cos(t), What is the steady-state response?  (A) √2sin(t+450) (B) √2sin(t-450) (C) sin(t-450) (D) Sin(t) 

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Find the noise factor for an antenna at 27°C with equivalent noise temperature 30°K: (1) 20 (2) 100 (3) 300 (4) 1.1 

asked May 28, 2018 in Analog electronics circuits by Shimroz123
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Semiconductor devices are protected by a fuse and the material used is (A) silver (B) gold (C) copper (D) tin 

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Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to (a) Phosphorous (b) Boron (c) Antimony (d) Aluminium 

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While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) Doped semiconductor has more carriers as compared to un-doped semiconductor (C) Doped semiconductor has less resistance as compared to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

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To increase mobility of electron in a given piece of semiconductor (A) Increase overall size of the semiconductor (B) Increase length (C) Increase width (D) Small increase in temperature above room temperature value

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