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In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: (1) Remains unaltered (2) Moves towards the conduction band (3) Move towards the center of forbidden energy gap (4) May or may not move depending on temperature 

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In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: Moves towards the conduction band

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