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FET
BJT
It is unipolar device i.e. current in the device is carried either by electrons or holes
It is bipolar device i.e. current in the device is carried either by both electrons & holes
It is a voltage controlled device i.e. voltage at the gate (or drain) terminal controls amount of current flowing through the device.
It is a current controlled device i.e. the base current controls the amount of collector current.
Its input resistance is very high & is of order of several megaohms.
Its input resistance is very low compared to FET.
It has a negative temperature co-efficient at high current levels. It means that current decreases as temperature increases.
It has a positive temperature coefficient at high current levels. It means that current increases as temperature increases.
It is less noisy.
It is comparatively noisier.
It has relatively lower gain bandwidth product as compared to BJT.
It has relatively higher gain bandwidth product as compared to FET.
It is simpler to fabricate as IC & occupies less space on chip compared to BJT.
It is comparatively difficult to fabricate on IC & occupies more space on chip compared to FET.
It is relatively immune to radiation.
It is susceptible to radiation
It does not suffer from minority- carrier storage effects & therefore has higher switching speeds & cut-off frequencies.
It suffers from minority- carrier storage effects & therefore has lower switching speeds & cut-off frequencies. 

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