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BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device.
The input impedance of BJT is low. The input impedance of MOSFET is high. The input impedance of IGBT is high.
The drive circuit of BJT is complex. The drive circuit of MOSFET is simple. The drive circuit of IGBT is simple.
Switching speed of BJT is in the range of microseconds means slow switching speed. Switching speed of MOSFET is in the range of nanoseconds means fast switching speed. Switching speed of IGBT is more than BJT but less than MOSFET.
BJT is the negative temperature coefficient device. MOSFET is the positive temperature coefficient device. IGBT shows negative temperature coefficient up to 70% after that it shows positive temperature coefficient.
Conduction losses are low. Conduction losses are high. Conduction losses are low.
Switching losses are high for high frequency. Switching losses are low for high frequency. Switching losses are low for high frequency.
BJT is a bipolar device. MOSFET is a unipolar device. IGBT if bipolar device.
BJT is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

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