Can you help by answering this question?

What is the cause for light or dark recording of EEG?

23 views
in Semiconductor by

1 Answer

0 votes
by

Addition of pentavalent impurity to a semiconductor creates many Free electrons.

Related questions

1 answer 32 views

Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to (a) Phosphorous (b) Boron (c) Antimony (d) Aluminium 

asked May 25, 2018 in Semiconductor by Shimroz123
1 answer 12 views

To increase mobility of electron in a given piece of semiconductor (A) Increase overall size of the semiconductor (B) Increase length (C) Increase width (D) Small increase in temperature above room temperature value

asked May 12, 2018 in Semiconductor by Shimroz123
1 answer 9 views

Explain types of impurity added in a semiconductor with one example each.

asked 1 day ago in Electronic Engineering Materials by Shimroz123
1 answer 12 views

Which of the following serves as donor impurity in Silicon?  (A) Boron (B) Indium (C) Germanium (D) Antimony 

asked Apr 5, 2018 in Semiconductor by Shimroz123
1 answer 16 views

Intrinsic semiconductor material is characterized by a valence shell of how many electrons? a) 1 b) 2 c) 4 d) 6

asked Apr 14, 2018 in Instrumentation and control by Shimroz123
1 answer 68 views

In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: A) Half the total number of electrons in the crystal B) Zero C) Half the number of atoms in the crystal D) Half the number of free electrons in the crystal

asked Jun 18, 2018 in Semiconductor by Shimroz123
1 answer 8 views

The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

asked May 17, 2018 in Semiconductor by Shimroz123
1 answer 13 views

The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to  (a) 1 ionic bond and 3 covalent bonds (b) 1 ionic bond and 4 covalent bonds (c) 2 ionic bonds and 2 covalent bonds (d) 2 ionic bonds and 4 covalent bonds

asked May 15, 2018 in Semiconductor by Shimroz123
1 answer 15 views

The material used for ‘doping’ to prepare N - type semiconductor is

asked May 14, 2018 in Semiconductor by Shimroz123
0 answers 11 views

Addition of a pole to the open loop transfer function has the effect of (A) Pulling the root locus to the left (B) Pulling the root locus to the right (C) Either (A) or (B) (D) Does not have any effect on the root locus

asked Apr 14, 2018 in Electrical Engineering by Shimroz123
0 answers 11 views

Semiconductor devices are protected by a fuse and the material used is (A) silver (B) gold (C) copper (D) tin 

asked Jun 4, 2018 in Semiconductor by Shimroz123
1 answer 8 views

While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) Doped semiconductor has more carriers as compared to un-doped semiconductor (C) Doped semiconductor has less resistance as compared to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

asked May 12, 2018 in Semiconductor by Shimroz123
1 answer 46 views

A single-line-to-ground fault on a overhead transmission line creates (A) voltage sag (B) voltage swell (C) over voltage (D) voltage flicker 

asked Jun 4, 2018 in Electric Power Transmission by Shimroz123
0 answers 23 views

Using the F11 shortcut key to create a chart on chart sheet creates  (1) A default chart (2) A 2-dimensional column chart (3) A 2-dimensional bar chart (4) A 3-dimensional line chart

asked Apr 11, 2018 in Computer Engineering by Shimroz123
1 answer 13 views

In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: (1) Remains unaltered (2) Moves towards the conduction band (3) Move towards the center of forbidden energy gap (4) May or may not move depending on temperature 

asked May 29, 2018 in Semiconductor by Shimroz123
0 answers 11 views

In an intrinsic semiconductor the Fermi level is (a) closer to valence band. (b) closer to conduction band. (c) within the balance band. (d) midway between the valence and conduction bands. 

asked May 25, 2018 in Semiconductor by Shimroz123
0 answers 18 views

At absolute zero temperature, an intrinsic semiconductor behaves as (a) a good conductor (b) a super conductor (c) an insulator (d) variable resistor

asked May 25, 2018 in Semiconductor by Shimroz123
1 answer 4 views

The semiconductor used for LEDs emitting in the visible range is  (a) GaAs (b) GaAlAs (c) GalnAs (d) GaAsP

asked May 15, 2018 in Semiconductor by Shimroz123
1 answer 15 views
1 answer 8 views

How many minimum number of NOR gates are required to realize a two-input X-OR gate?

asked May 24, 2018 in Digital Electronics by Shimroz123
1 answer 26 views

A certain appliance uses 350 W. If it is allowed to run continuously for 24 days, how many kilowatt- hours of energy does it consume? A.20.16 kWh B.201.6 kWh C.2.01 kWh D.8.4 kWh

asked May 15, 2018 in Basic concepts by Shimroz123
1 answer 27 views

Dry etching refers to removal of material, typically a masked pattern of semiconductor material, by exposing material to a bombardment of ions which contain (a) Plasma of nitrogen, chlorine and boron trichloride (b) Plasma of sodium, chlorine and boron trichloride (c) Plasma of nitrogen, phosphorous and boron trichloride (d) Plasma of nitrogen, chlorine and boron trioxide

asked Apr 14, 2018 in Electrical Engineering by Zeeshan
1 answer 6 views

Give two examples of trivalent and pentavalent impurities.

asked Sep 5, 2018 by Zeeshan
1 answer 12 views

How many flip-flops are required to build a binary counter circuit to count from 0 to 1023 ? (a) 1 (b) 6 (c) 10 (d) 23 

asked May 26, 2018 in Digital Electronics by Shimroz123
1 answer 20 views

About how many times longer would a 10 watt light bulb be able to burn compared to a 100 watt bulb with the same energy?  (A) 10 times longer (B) 100 times longer (C) Same time (D) None of the above

asked May 8, 2018 in Electrical Engineering by Shimroz123
1 answer 13 views

How many bits Internet address is assigned to each host on a TCP/IP Internet which is used in all communications with host?  A) 16 bits B) 32 bits C) 48 bits D) 64 bits

asked Apr 11, 2018 in Computer Engineering by Shimroz123
0 answers 24 views

How many flip-flops are required to construct a mod-32 counter?  A) 32 B) 6 C) 5 D) 4

asked Apr 9, 2018 in Electronics Engineering by Shimroz123
1 answer 11 views

In application of superposition theorem, one is required to solve as many circuits as there are  1. Nodes 2. Branches 3. Meshes 4. Sources 

asked May 13, 2018 in Network Analysis by Shimroz123
1 answer 10 views

When reverse bias is applied to a junction diode, it  1.increases the potential barrier 2.decreases the potential barrier 3.greatly increases the minority carrier current 4.greatly increases the majority carrier current 

asked May 13, 2018 in Semiconductor by Shimroz123

Welcome to electronics2electrical.com here you can ask questions related to electrical, electronics, mechanical, telecommunication, instrumentation, computer, mathematics, physics etc.
Be respectful to all the members. Do not copy and paste the answers from other websites which have copyright content. While asking question give full details about it.

Categories

Most popular tags

power motor dc circuit transformer voltage current used system phase resistance factor synchronous load ac energy induction electric generator series frequency between speed capacitor use electrical meter line difference control type mosfet transmission magnetic plant high single instrument bjt unit source advantages function diode and machine winding field define torque parallel amplifier supply shunt thyristor motors electricity arduino maximum time relay armature problem value on transformers types coil diagram state flow ratio material three formula starting direction theorem method emf operating efficiency digital wave microprocessor test instruments inductance loss measure operation connected signal low applications effect single-phase network temperature working constant losses different law wattmeter measuring compare controlled breaker drive device logic rc full switch flux wire resistivity disadvantages free of materials machines angle force converter conductor transistor gain open protection scr core measurement number bridge principle generators reactance circuits negative the friction iron loop short pole battery conservation steam resistors hysteresis computer using analog lines secondary station gate a rectifier inverter linear induced relays nuclear capacitance basic characteristics design direct work rotor electronics ammeter forces diesel damping rlc connection factors capacitors minimum insulation moving regulation running self systems air fault range main stability quality starter igbt eddy alternator ideal rl average 3-phase plants arc thermal error fuzzy biasing dielectric pressure balanced superposition errors copper rotation feedback impedance measured electronic electrons charge inductive transfer explain start off back curve over solar is three-phase tariff locomotive peak bias zener engineering commutator surge conductors rating universal potentiometer density permanent mechanical transducer capacity memory adc excitation two fuse pure harmonics application semiconductor inductor internal pmmc reaction welding resonance traction permeability breakers rms designed electromagnetic si generation brushes switching capacitive shaded rate 1 distribution resistor methods delta star oscillator reluctance simplification algebra 8085 boolean weston dynamometer insulating strength installation definition fuel heating earth units
...