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The impurity level in an extrinsic semiconductor is about 1 atom for 108 atoms of pure semiconductor.

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1 answer 32 views

Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to (a) Phosphorous (b) Boron (c) Antimony (d) Aluminium 

asked May 25, 2018 in Semiconductor by Shimroz123
1 answer 68 views

In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: A) Half the total number of electrons in the crystal B) Zero C) Half the number of atoms in the crystal D) Half the number of free electrons in the crystal

asked Jun 18, 2018 in Semiconductor by Shimroz123
0 answers 11 views

In an intrinsic semiconductor the Fermi level is (a) closer to valence band. (b) closer to conduction band. (c) within the balance band. (d) midway between the valence and conduction bands. 

asked May 25, 2018 in Semiconductor by Shimroz123
1 answer 13 views

In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: (1) Remains unaltered (2) Moves towards the conduction band (3) Move towards the center of forbidden energy gap (4) May or may not move depending on temperature 

asked May 29, 2018 in Semiconductor by Shimroz123
1 answer 12 views

Which of the following serves as donor impurity in Silicon?  (A) Boron (B) Indium (C) Germanium (D) Antimony 

asked Apr 5, 2018 in Semiconductor by Shimroz123
1 answer 9 views

Explain types of impurity added in a semiconductor with one example each.

asked 2 days ago in Electronic Engineering Materials by Shimroz123
1 answer 15 views
1 answer 4 views

The semiconductor used for LEDs emitting in the visible range is  (a) GaAs (b) GaAlAs (c) GalnAs (d) GaAsP

asked May 15, 2018 in Semiconductor by Shimroz123
1 answer 8 views

Define the term-Dopant, Extrinsic semiconductor. 

asked Sep 4, 2018 by Shimroz123
1 answer 8 views

The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

asked May 17, 2018 in Semiconductor by Shimroz123
0 answers 18 views

At absolute zero temperature, an intrinsic semiconductor behaves as (a) a good conductor (b) a super conductor (c) an insulator (d) variable resistor

asked May 25, 2018 in Semiconductor by Shimroz123
1 answer 12 views

To increase mobility of electron in a given piece of semiconductor (A) Increase overall size of the semiconductor (B) Increase length (C) Increase width (D) Small increase in temperature above room temperature value

asked May 12, 2018 in Semiconductor by Shimroz123
1 answer 13 views

The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to  (a) 1 ionic bond and 3 covalent bonds (b) 1 ionic bond and 4 covalent bonds (c) 2 ionic bonds and 2 covalent bonds (d) 2 ionic bonds and 4 covalent bonds

asked May 15, 2018 in Semiconductor by Shimroz123
2 answers 52 views

Define intrinsic and extrinsic semiconductor. 

asked 2 days ago in Electronic Engineering Materials by Shimroz123
1 answer 11 views

Compare intrinsic and extrinsic semiconductor

asked Sep 5, 2018 by Shimroz123
1 answer 23 views

At very high temperatures, extrinsic semiconductor becomes intrinsic semiconductor because (A) Of drive in diffusion of dopants & carriers. (B) Band to band transition dominates impurity ionization. (C) Impurity ionization dominates band to band transition. (D) Band to band transition is balanced by impurity ionisation.

asked Apr 28, 2018 in Physics by Shimroz123
1 answer 6 views

Pure silicon is (a) a p-type semiconductor (b) an n-type semiconductor (c) an intrinsic semiconductor (d) an extrinsic semiconductor 

asked May 25, 2018 in Semiconductor by Shimroz123
1 answer 8 views

While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) Doped semiconductor has more carriers as compared to un-doped semiconductor (C) Doped semiconductor has less resistance as compared to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

asked May 12, 2018 in Semiconductor by Shimroz123
0 answers 11 views

Semiconductor devices are protected by a fuse and the material used is (A) silver (B) gold (C) copper (D) tin 

asked Jun 4, 2018 in Semiconductor by Shimroz123
1 answer 15 views

The material used for ‘doping’ to prepare N - type semiconductor is

asked May 14, 2018 in Semiconductor by Shimroz123
1 answer 49 views

An A.C. voltage is impressed across a pure resistance of 3.5 ohms in parallel with a pure inductance of impedance of 3.5 ohms?

asked Mar 25, 2018 in Electrical Engineering by Shimroz123
1 answer 18 views

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asked Apr 4, 2018 in Lesson 2 Introduction to Real Time Embedded Systems Part II by Shimroz123
0 answers 18 views

It is desired to illuminate a drawing hall with an average illumination of about 250 lux. The area of hall is 30 m × 20 m. The lamps are to be fitted at 5 m height. Find the number and size of incandescent lamps required for an efficiency of 12 lumen/watt. Utilization factor = 0.4 and maintenance factor = 0.85.   (a) 40 and 1000 W (b) 20 and 500 W (c) 60 and 1000 W (d) None of the above 

asked Apr 10, 2018 in Electrical Engineering by Shimroz123
1 answer 8 views

Define (i) Intrinsic semiconductor (ii)Fermi energy level  

asked Sep 4, 2018 by Shimroz123
2 answers 9 views

At room temperature in an intrinsic piece of Si there could be (A) No free carriers (B) Some electrons but no holes (C) Some holes but no electrons (D) Equal number of holes and electrons

asked May 12, 2018 in Semiconductor by Shimroz123
0 answers 13 views

Which one among these is an example for trivalent impurity?  (A) Phosphorus (B) Antimony (C) Gallium (D) Arsenic

asked Apr 5, 2018 in Electrical Engineering by Shimroz123
1 answer 12 views

The lossless line of characteristics impedance 300 Ohm is terminated in a pure resistance of 200 Ohm. The value of the standing wave ratio is  (a) 1.5 (b) 0.67 (c) 1.0 (d) 1.25

asked May 16, 2018 in Electronics Engineering by Shimroz123
0 answers 9 views

Shielding angle of an EHV line is about (a) 20° (b) 50° (c) 70° (d) 90°

asked May 25, 2018 in Electric Power Transmission by Shimroz123
0 answers 29 views

For an ADC, full scale output voltage is about 10 V.For a resolution of about 9.78mV, number of bits required is  A) 6 B) 8 C) 10 D) 12

asked Apr 9, 2018 in Electronics Engineering by Shimroz123

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