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2 answers 19 views

A bipolar junction transistor (BJT) is used as a power control switch by biasing it in the cut-off region (OFF state) or in the saturation region (ON state). In the ON state, for the BJT  (A) both the base-emitter and base-collector junctions are reverse biased (B) the base-emitter junction is reverse ... (C) the base-emitter junction is forward biased, and the base-collector junction is reverse biased (D) both the base-emitter and base-collector junctions are forward biased

asked May 18, 2018 in Bipolar Junction Transistor by Shimroz123
1 answer 14 views

The leakage current of PN junction is caused by?

asked Mar 19, 2018 in Electronics Engineering by Shimroz123
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asked May 28, 2018 in Electronics Engineering by Shimroz123
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Barrier potential in a P-N junction is caused by   (A) thermally generated electrons and holes (B) diffusion of majority carriers across the junction (C) migration of minority carriers across the junction (D) flow of drift current.

asked May 17, 2018 in Diode by Shimroz123
1 answer 14 views

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asked Jun 17, 2018 in Electronics Engineering by Shimroz123
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In a bipolar transistor when in saturation, the dc current gain is (a) less than (3 (b) greater than (3 (c) equal to 13 (d) zero

asked Apr 14, 2018 in Electrical Engineering by Shimroz123
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Loading effect is principally caused by instruments   (a) High resistance (b) Low sensitivity (c) High sensitivity (d) High range

asked May 13, 2018 in Instrumentation and control by Shimroz123
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Maximum junction temperature and maximum ambient temperature of a power transistor (in degree Centigrade) are 150 and 52. The set level power dissipation is 32 watts, transistor thermal factor is 0.7 and of mica washer is 0.5.Thermal resistivity of heat sink (in degree C/W) is  A) 1.8 B) 3.2 C) 6.4 D) 9.8

asked Apr 9, 2018 in Electronics Engineering by Shimroz123
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Define junction field effect transistor (JFET) and give an example.

asked Sep 5, 2018 by Shimroz123
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In a junction transistor, the doping level of collector region is:  (1) Higher than emitter region (2) Lower than base region (3) Is higher than base region but lower than emitter region  (4) Independent of the doping of base and emitter regions.

asked Apr 9, 2018 in Electrical Engineering by Shimroz123
1 answer 14 views

The 'h' parameter equivalent circuit of a junction transistor is valid for   (A) High frequency, large signal operation (B) High frequency, small signal operation (C) Low frequency, large signal operation.

asked May 17, 2018 in Power Electronics by Shimroz123
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ICB0 in a transistor can be reduced by reducing:  (1) IB (2) VCC (3) IE (4) Temperature

asked Apr 9, 2018 in Electronics Engineering by Shimroz123
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What is meant by stabilization in transistor?

asked Mar 10, 2018 in Electronics Engineering by Quiz
1 answer 10 views

Why transistor is called as bipolar device.

asked Sep 4, 2018 by Shimroz123
1 answer 12 views

Crawling in an Induction motor is caused by (A) Low voltage supply (B) High loads (C) Harmonics developed in the motor (D) Improper design of the machine

asked Apr 10, 2018 in Induction Machine by Shimroz123
1 answer 15 views

In a BJT circuit a pnp transistor is replaced by npn transistor. To analyse the new circuit (1) All calculations done earlier have to be repeated (2) Replace all calculated voltages by reverse values (3) Replace all calculated currents by reverse values (4) Replace all calculated voltages and currents by reverse values 

asked May 28, 2018 in Bipolar Junction Transistor by Shimroz123
1 answer 26 views

A circuit breaker is designed to protect an electrical circuit from damage caused by :  (A) Over load (B) Short circuit (C) Over current (D) All of the above

asked May 8, 2018 in Switchgear And Protection by Shimroz123
1 answer 10 views

The threshold effect in demodulators is a) The rapid fall of output SNR when the input SNR falls below a particular value b) Exhibited by all the demodulators when the input SNR is low c) Exhibited by all AM suppressed carrier coherent demodulators d) Exhibited by correlation receivers

asked Jun 15, 2018 in Electronics Engineering by Shimroz123
1 answer 13 views

The effect of a finite gain of an operational amplifier used in an integrator is that (A) it would not integrate (B) the slope of the output will vary with time (C) the final value of the output voltage will reduce (D) there will be instability in the circuit

asked Apr 26, 2018 in Electronics Engineering by Shimroz123
0 answers 17 views

For a transistor, Ceb=20pF, Ccb=5pF, re=1kOhm. Its figure of merit (in MHz) is about  A) 65 B) 650 C) 130 D) 13 

asked Apr 9, 2018 in Electronics Engineering by Shimroz123
0 answers 10 views

In a transistor Colpitts oscillator, C1 = 0.001 µF, C2 = 0.01 µF and L = 5 µH. The frequency of oscillation in MHz will be (a) 2.37 MHz (b) 10.00 MHz (c) 11.54 MHz (d) 9.09 MHz 

asked May 25, 2018 in Electronics Engineering by Shimroz123
1 answer 18 views

In the common–emitter transistor circuit, if the current gain is 100 and the collector current is 10 mA, the base current is: (1) 10 µA (2) 100 µA (3) 1 A (4) 10 A 

asked May 29, 2018 in Electronics Engineering by Shimroz123
0 answers 47 views

In IC fabrication, the common form of PNP transistor is  A) Vertical PNP B) Lateral PNP C) Triple diffusion PNP D) Substrate PNP

asked Apr 5, 2018 in Electronics Engineering by Shimroz123
1 answer 47 views

Is BJT unipolar or bipolar Why?

asked Jan 5, 2018 in Electronics Engineering by Quiz
1 answer 18 views

A transistor has a typical value of β = 200 , If the collector current is 15 mA, then base current will be

asked May 14, 2018 in Electronics Engineering by Shimroz123
1 answer 8 views

Beta cut-off frequency of a transistor is the frequency at which the Beta is • 0.707 of low frequency value • Zero • Equal to low frequency value • None of the above.

asked May 14, 2018 in Electronics Engineering by Shimroz123
1 answer 20 views

What is the main use of a transistor?

asked Mar 10, 2018 in Electronics Engineering by Quiz
1 answer 10 views

In a transistor  1. Emitter is heavily doped while the collector is moderately doped 2. Collector base junction is forward biased 3. Emitter is made wider than collector 4. The input resistance is much higher than output resistance 

asked May 13, 2018 in Electronics Engineering by Shimroz123
0 answers 15 views

What is meant by body effect in MOSFET?

asked Mar 19, 2018 in MOSFET by Quiz
0 answers 17 views

In a feedback series regulator circuit, the output voltage is regulated by controlling the a. Magnitude of the I/P voltage b. Gain of the feedback transistor c. Voltage drop across the series pass transistor d. Reference voltage

asked Apr 12, 2018 in Electronics Engineering by Shimroz123
0 answers 97 views

In a portable instrument, the controlling torque is provided by  A) Spring B) gravity C) eddy currents D) all of the above

asked Apr 9, 2018 in Electronics Engineering by Shimroz123
0 answers 21 views

If the antenna diameter in a radar system is increased by a factor of 4, the maximum range will be increased by a factor of  (a) 2 (b) 4 (c) 8 (d) 16

asked Apr 9, 2018 in Electronics Engineering by Shimroz123
1 answer 12 views

In an npn transistor, _____ are the minority carriers.   (a) Free electrons (b) Acceptor ions (c) Donor ions (d) Holes

asked May 13, 2018 in Electronics Engineering by Shimroz123
1 answer 27 views

For a 1.8o, 2-phase bipolar stepper motor, the stepping rate is 100 steps/second. The rotational speed of the motor in rpm is  (A) 15 (B) 30 (C) 60 (D) 90

asked May 17, 2018 in Electrical Machine by Shimroz123
0 answers 37 views

 The effect of phase error of local oscillator on spectral components in coherent detection of SSB Amplitude modulated signal is : a. The frequency of demodulated signals varies with fixed amplitude b. Amplitude of demodulated signals varies with fixed frequency c. Both amplitude & frequency vary d. The recovered signal has phase offset with fixed amplitude

asked Apr 12, 2018 in Electronics Engineering by Shimroz123
2 answers 68 views

Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

asked Apr 4, 2018 in MOSFET by Shimroz123
1 answer 13 views
0 answers 24 views

What is thermal runaway of a transistor?

asked Mar 10, 2018 in Electronics Engineering by Quiz
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Why biasing is required for a transistor?

asked Mar 10, 2018 in Electronics Engineering by Quiz
0 answers 39 views

The effect of corona is less by using (A) overhead lines of large conductor size (B) under ground cable of small conductor size (C) overhead lines having less spacing between conductors (D) overhead lines of higher voltages 

asked Jun 4, 2018 in Power system by Shimroz123
0 answers 14 views

The power loss in a transistor is a function of the product of (A) base current and collector-emitter voltage (B) collector current and base current (C) collector current and saturation voltage (D) collector current and collector-emitter voltage 

asked Jun 4, 2018 in Power Electronics by Shimroz123
0 answers 14 views

If the emitter resistance ‘Re ’ in a transistor amplifier is removed, then (a) base to emitter junction will be less forward biased. (b) gain of amplifier decreases. (c) Q-point becomes unstable. (d) All of these 

asked May 25, 2018 in Amplifier by Shimroz123
0 answers 13 views

In a transistor biasing circuit with voltage divider bias circuit, if the operating point is on the left on the load line. (a) peak of the input voltage is clipped. (b) one side peak of the output voltage is clipped. (c) both positive and negative peaks are clipped. (d) there will be a distortion in the middle.

asked Apr 14, 2018 in Electrical Engineering by Shimroz123
0 answers 10 views

The set of transistor characteristics which enable α to be determined directly from the slope is (a) CB transfer characteristics (b) CE transfer characteristics (c) CB input characteristics (d) CE output characteristics

asked May 25, 2018 in Electronics Engineering by Shimroz123

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