i. A MOSFET is a voltage controlled majority carrier device.
ii. Enhancement type MOSFETs are normally off devices while depletion type MOSFETs are normally on devices.
iii. The Gate terminal of a MOSFET is isolated from the semiconductor by a thin layer of SiO2.
iv. The MOSFET cell embeds a parasitic BJT in its structure.
v. The gate-source voltage at which the inversion layer in a MOSFET is formed is called the threshold voltage.
vi. The thickness of the depletion layer remains constant as gate source voltage is increased byond the threshold voltage.
Distributed under Creative Commons Attribution-ShareAlike - CC BY-SA.
Version 2 EE IIT, Kharagpur