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Fill in the blank(s) with the appropriate word(s) 

i. A MOSFET is a ________________ controlled ________________ carrier device. 

ii. Enhancement type MOSFETs are normally ________________devices while depletion type MOSFETs are normally ________________ devices. 

iii. The Gate terminal of a MOSFET is isolated from the semiconductor by a thin layer of ________________. 

iv. The MOSFET cell embeds a parasitic ________________ in its structure. 

v. The gate-source voltage at which the ________________ layer in a MOSFET is formed is called the ________________ voltage. 

vi. The thickness of the ________________ layer remains constant as gate source voltage is increased byond the ________________ voltage. 

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i. A MOSFET is a voltage controlled majority carrier device. 


ii. Enhancement type MOSFETs are normally off devices while depletion type MOSFETs are normally on devices.  


iii. The Gate terminal of a MOSFET is isolated from the semiconductor by a thin layer of SiO2


iv. The MOSFET cell embeds a parasitic BJT in its structure. 


v. The gate-source voltage at which the inversion layer in a MOSFET is formed is called the threshold voltage.


vi. The thickness of the depletion layer remains constant as gate source voltage is increased byond the threshold voltage.  



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Version 2 EE IIT, Kharagpur

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