A MOSFET like a BJT has alternating layers of p and n type semiconductors. However, unlike BJT the p type body region of a MOSFET does not have an external electrical connection. The gate terminal is insulated for the semiconductor by a thin layer of SiO2. The body itself is shorted with n+ type source by the source metallization. Thus minority carrier injection across the source-body interface is prevented. Conduction in a MOSFET occurs due to formation of a high density n type channel in the p type body region due to the electric field produced by the gate-source voltage. This n type channel connects n+ type source and drain regions. Current conduction takes place between the drain and the source through this channel due to flow of electrons only (majority carriers). Where as in a BJT, current conduction occurs due to minority carrier injection across the Base-Emitter junction. Thus a MOSFET is a voltage controlled majority carrier device while a BJT is a minority carrier bipolar device.
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Version 2 EE IIT, Kharagpur