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Fill in the blank(s) with the appropriate word(s) 

i. A MOSFET operates in the ________________ mode when vGS < vGS(th) 

ii. In the ohmic region of operation of a MOSFET vGS – vGS (th) is greater than ________________. 

iii. rDS (ON) of a MOSFET ________________ with increasing vGS. 

iv. In the active region of operation the drain current iD is a function of ________________ alone and is independent of ________________. 

v. The primary break down voltage of MOSFET is ________________ of the drain current. 

vi. Unlike BJT a MOSFET does not undergo ________________. 

vii. ________________ temperature coefficient of rDS(ON) of MOSFETs facilitates easy ________________ of the devices. 

viii. In a Power MOSFET the relation ship between iD and vGS – vGS(th) is almost ________________ in the active mode of operation. 

ix. The safe operating area of a MOSFET is restricted on the left hand side by the ________________ limit. 

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i. A MOSFET operates in the Cut off mode when vGS < vGS(th) 

ii. In the ohmic region of operation of a MOSFET vGS – vGS (th) is greater than vDS

iii. rDS (ON) of a MOSFET decreases with increasing vGS. 

iv. In the active region of operation the drain current iD is a function of vGS alone and is independent of vDS

v. The primary break down voltage of MOSFET is independent of the drain current. 

vi. Unlike BJT a MOSFET does not undergo second break down. 

vii. Positive temperature coefficient of rDS(ON) of MOSFETs facilitates easy paralleling of the devices. 

viii. In a Power MOSFET the relation ship between iD and vGS – vGS(th) is almost linear in the active mode of operation. 

ix. The safe operating area of a MOSFET is restricted on the left hand side by the rDS (ON) limit. 



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