i. A MOSFET operates in the Cut off mode when vGS < vGS(th)
ii. In the ohmic region of operation of a MOSFET vGS – vGS (th) is greater than vDS.
iii. rDS (ON) of a MOSFET decreases with increasing vGS.
iv. In the active region of operation the drain current iD is a function of vGS alone and is independent of vDS.
v. The primary break down voltage of MOSFET is independent of the drain current.
vi. Unlike BJT a MOSFET does not undergo second break down.
vii. Positive temperature coefficient of rDS(ON) of MOSFETs facilitates easy paralleling of the devices.
viii. In a Power MOSFET the relation ship between iD and vGS – vGS(th) is almost linear in the active mode of operation.
ix. The safe operating area of a MOSFET is restricted on the left hand side by the rDS (ON) limit.
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Version 2 EE IIT, Kharagpur