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Consider the following statements in respect of important features of IGBT. 

P. It has high input impedance gate as that of a MOSFET 

Q. It has low ON state voltage drop as that of a BJT 

R. Turn-off time is significantly less than MOSFET 

Which of these statements are correct? 

A) P and Q B) P and R C) Q and R D) P, Q and R

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