Consider the following statements in respect of important features of IGBT. 

P. It has high input impedance gate as that of a MOSFET 

Q. It has low ON state voltage drop as that of a BJT 

R. Turn-off time is significantly less than MOSFET 

Which of these statements are correct? 

A) P and Q B) P and R C) Q and R D) P, Q and R
in Electronics Engineering by

Related questions

1 answer
1 answer
1 answer

9,143 questions

7,898 answers

145 comments

3,250 users